FRM9130 transistor equivalent, p-channel mosfet transistor.
It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. De.
*-6A, -100V, RDS(on) = 0.55Ω
*Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and pr.
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